By Hagen Marien
This booklet offers perception into natural electronics know-how and in analog circuit suggestions that may be used to extend the functionality of either analog and electronic natural circuits. It explores the area of natural electronics know-how for analog circuit purposes, particularly shrewdpermanent sensor platforms. It makes a speciality of the entire construction blocks within the facts course of an natural sensor method among the sensor and the electronic processing block. Sensors, amplifiers, analog-to-digital converters and DC-DC converters are mentioned intimately. assurance contains circuit recommendations, circuit implementation, layout judgements and dimension result of the construction blocks described.
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Additional resources for Analog Organic Electronics: Building Blocks for Organic Smart Sensor Systems on Foil
6 Organic Transistor Modeling Until this point, but also further on in this dissertation, a straightforward MOS transistor model is adopted for fitting the organic thin-film transistor behavior. Although TFTs show a certain behavioral correspondence with standard CMOS transistors, their small-scale physical behavior is totally different from that in a CMOS transistor, as explained in Sect. 2. At the moment the complexity of organic circuits is 46 2 Organic Thin-Film Transistor Technology still small enough to keep using the adopted model for another while yet for some applications and especially for a better understanding it is more interesting to use a physical OTFT model that is constructed in accordance with the physical behavior of the OTFT.
The Early voltage can be derived and amounts to 5 V/µm. The transistor follows the typical MOS transistor behavior, given in Eq. 6) for the subthreshold regime: 30 2 Organic Thin-Film Transistor Technology VG=−2V:−2V:−10V 2 |I SD | [µA] 3 1 0 −20 −15 −10 −5 0 VD [V] Fig. 2 4-Contact OTFT Contrary to transistors in a standard Si technology, thin-film transistors do not have a bulk contact. The influence of this bulk contact on the transistor behavior is a square root shift of the threshold voltage VT .
It is deducted in Eq. 8). The calculated value does not match very well with the measured value. This can be caused by a change in the process after the publication of Gelinck et al. (2005). The measured value will be further employed in this work. Furthermore, the value of ξ is different for positive and negative voltages, according to Maddalena et al. (2008). Nevertheless, the measurements showed that in the applied technology these values are approximately identical hence they permit to use only the one measured value for ξ in this work.