Advanced Far Infrared Detectors

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6) Fig. 3 illuminated. mV) p+-p-p+ and Ge:Ga (Courtesy Haegel and White, Ref. 6) Fig. 4 Mesh plot of the relative free hole increase as a function of position and time in a homogeneously illuminated p+-p-p+ Ga:Ge photoconductor. The illumination is turned on at 10-8 s. , Ref. 8) Fig. urn, B) 100 _tm, and C) 40 ktm for constant with illumination. , Ref. 8) Fig. 6 Schematic relative response of Si:B, Ge:Be, Ge:Ga and uniaxially stressed Ge:Ga photoconductors. Fig. 7 Tape automated bonding focal plane module of the integrator and multiplexer chips for a linear 32 pixel Ge:Ga array.

Photons can ionize neutral acceptors forming a free hole (_) charged acceptor (A-). Incoming and a negatively The free hole drifts an average distance 1 before it recombines with an A-. Fig. 2 The near-contact band diagram showing the Fermi level position relative to the valence band edge. (Courtesy Haegel and White, Ref. 6) Fig. 3 illuminated. mV) p+-p-p+ and Ge:Ga (Courtesy Haegel and White, Ref. 6) Fig. 4 Mesh plot of the relative free hole increase as a function of position and time in a homogeneously illuminated p+-p-p+ Ga:Ge photoconductor.

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